PART |
Description |
Maker |
IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2,银行注册内存模块(32M × 72配置2组寄存同步动态内存模块)
|
International Business Machines, Corp.
|
WS1M32V-17G3I WS1M32V-17G3IA WS1M32V-20G3I |
1Mx32 SRAM 3.3V MODULE 1Mx32 SRAM3.3模块 1Mx32 SRAM 3.3V MODULE 1Mx32 SRAM.3模块
|
Unisonic Technologies Co., Ltd. Electronic Theatre Controls, Inc. Microsemi, Corp.
|
TC58NS256DC EA10128 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) From old datasheet system TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
Toshiba Semiconductor
|
W7G21M32SVX120BNI W7G21M32SVX90BNC W7G21M32SVX90BN |
8MB/4MB (2x1Mx32 / 1Mx32) CMOS, Boot Sector Flash Memory Module
|
WEDC[White Electronic Designs Corporation]
|
IBM13M32734BCD |
32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2组寄缓冲同步动态RAM模块) 32M × 72配置2,银行注缓冲内存模组2M × 72配置2组寄缓冲同步动态内存模块)
|
IBM Microeletronics International Business Machines, Corp.
|
KM23C32005BG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5(VDD)在2.5(提供VDDQ)V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
IBM13Q32734BCA-10Y |
x72 SDRAM Module 32M x 72 Registered SDRAM Module(32M x 72 200脚寄存同步动态RAM模块) 32M × 72配置注册内存模块2M × 72配置200脚寄存同步动态内存模块)
|
International Business Machines, Corp.
|
DP3S1MX32PY5 |
32M CMOS SRAM
|
DPAC Technologies
|
KM23C32120C |
32M-Bit (4M X 8) CMOS Mask ROM
|
Samsung Semiconductor
|
MX25L3205A MX25L3205AMI-20 |
32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
|
Macronix International
|